Monocrystalline GaAs Screen: IAPM Researchers Receive a Utility Model Patent
IAPM researchers have received Patent No. 164522 for the utility model “Monocrystalline GaAs Screen with a Spectral-Gradient GaAs₁₋ₓPₓ Cathodoluminescent Layer.” Learn more about the inventors, the technical features of the development, and its potential applications.
Researchers at the Interregional Academy of Personnel Management (IAPM) have received a patent for the utility model “Monocrystalline GaAs Screen with a Spectral-Gradient GaAs₁₋ₓPₓ Cathodoluminescent Layer.” According to the information provided, details of Patent No. 164522 were published on 7 October 2026 in Bulletin No. 40 of the Ukrainian National Office for Intellectual Property and Innovations (UANIPIO).
The development concerns electronic engineering and involves a monocrystalline gallium arsenide substrate combined with a cathodoluminescent layer of varying composition. This technical solution is intended to improve the characteristics of a screen that converts an electron beam into optical radiation.
Inventors of the Utility Model
The patent holder is the Private Joint-Stock Company “Higher Educational Institution ‘Interregional Academy of Personnel Management’.” The inventors named in the patent are:
- Artem Mykyrdychovych Akhekian;
- Olena Anatoliivna Niemkova;
- Liubov Hryhorivna Kvasnii;
- Nataliia Ivanivna Marych;
- Marianna Stanislavivna Kompanovych.
According to the information provided, the patent application was filed on 25 May 2026 under application number u 2026 03060. Registration of the utility model documents intellectual property rights to the technical solution in accordance with the established procedure.
What Is a Monocrystalline GaAs Screen?
The utility model belongs to the field of electronic engineering and is classified under International Patent Classification code H01J 29/18. Its design includes a thermally conductive, electrically insulating monocrystalline substrate, a cathodoluminescent layer, and a conductive mirror coating.
The screen is based on a single crystal of gallium arsenide (GaAs). A monocrystalline layer of gallium arsenide phosphide solid solution (GaAs₁₋ₓPₓ) is grown on the substrate using epitaxy. A distinctive feature of the development is the variation in the composition of this layer across its thickness.
According to the utility model description, different parts of the layer have different bandgap widths. This is the principal structural feature of the proposed design.
How the Spectral-Gradient Layer Works
Cathodoluminescence is the emission of light by a material when it is exposed to an electron beam. The properties of the material, including its composition and structure, influence the characteristics of the emitted radiation.
The patented design uses a GaAs₁₋ₓPₓ layer with a varying composition. According to the utility model claims, the part of the layer adjacent to the substrate has a wider bandgap than the part located near the conductive coating.
This gradient is a key element of the technical solution. It takes into account the optical properties of the material and the characteristics of radiation as it passes through the layer. The device’s actual operating performance depends on its design, material parameters, and test results.
Potential Applications of the Development
Technologies based on semiconductor single crystals are used in research and development in electronics and optoelectronics. Depending on the material properties and device design, cathodoluminescent screens may be relevant to information display systems and specialised electronic equipment.
For a monocrystalline GaAs screen, practical considerations include the properties of the substrate, the characteristics of the cathodoluminescent layer, the interaction between materials within the structure, and the efficiency with which energy from an electron beam is converted into light.
Further assessment of the development’s potential applications requires consideration of its technical parameters and experimental results. The granting of a patent confirms the registration of the utility model, but does not, in itself, demonstrate that the technology has been implemented industrially or that it outperforms existing alternatives.
Patenting as Part of IAPM’s Research Activities
Securing rights to a utility model is one way to protect the results of intellectual activity and establish authorship of a technical solution. For higher education institutions, this work can also provide a basis for further research, identifying potential partners, and exploring opportunities for practical application.
The patent for the monocrystalline GaAs screen adds to the body of technical research produced by the IAPM research team. Further development of similar research will depend on experimental validation, the identification of suitable applications, and opportunities to collaborate with organisations interested in these technologies.